AIDW16S65C5XKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 10.19 EUR |
| 10+ | 9.15 EUR |
| 25+ | 8.66 EUR |
| 100+ | 7.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AIDW16S65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3, Qualification: AEC-Q100/101, Current - Reverse Leakage @ Vr: 90 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO247-3-41, Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 471pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote AIDW16S65C5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
AIDW16S65C5XKSA1 | Infineon Technologies |
 Description: DIODE SIL CARB 650V 16A TO247-3Qualification: AEC-Q100/101 Current - Reverse Leakage @ Vr: 90 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3-41 Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 471pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AIDW16S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W Max. forward voltage: 1.7V Load current: 16A Power dissipation: 94W Max. forward impulse current: 95A Max. off-state voltage: 650V Application: automotive industry Technology: CoolSiC™ 5G; SiC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AIDW16S65C5XKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 650V 16A TO247-3
Qualification: AEC-Q100/101
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIDW16S65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH