AIDW20S65C5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.24 EUR |
| 10+ | 12.86 EUR |
| 100+ | 10.65 EUR |
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Technische Details AIDW20S65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 584pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.
Weitere Produktangebote AIDW20S65C5XKSA1 nach Preis ab 10.68 EUR bis 14.31 EUR
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AIDW20S65C5XKSA1 | Hersteller : Infineon Technologies |
Schottky Diodes & Rectifiers SIC_DISCRETE |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIDW20S65C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
AIDW20S65C5XKSA1 THT Schottky diodes |
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