AIHD03N60RFATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesIGBT with integrated diode in packages offering space saving advantage
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details AIHD03N60RFATMA1 Infineon Technologies
Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/128ns, Switching Energy: 50µJ (on), 40µJ (off), Test Condition: 400V, 2.5A, 68Ohm, 15V, Gate Charge: 17.1 nC, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 7.5 A, Power - Max: 53.6 W.
Weitere Produktangebote AIHD03N60RFATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
AIHD03N60RFATMA1 | Hersteller : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/128ns Switching Energy: 50µJ (on), 40µJ (off) Test Condition: 400V, 2.5A, 68Ohm, 15V Gate Charge: 17.1 nC Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 7.5 A Power - Max: 53.6 W |
Produkt ist nicht verfügbar |
|
| AIHD03N60RFATMA1 | Hersteller : Infineon Technologies | IGBT Transistors DISCRETES |
Produkt ist nicht verfügbar |