Technische Details AIHD04N60RATMA1 Infineon Technologies
Category: SMD IGBT transistors, Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK, Case: DPAK, Kind of package: reel; tape, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), Mounting: SMD, Technology: TRENCHSTOP™ RC, Turn-on time: 22ns, Gate charge: 27nC, Turn-off time: 317ns, Collector current: 4A, Pulsed collector current: 12A, Gate-emitter voltage: ±20V, Power dissipation: 75W, Collector-emitter voltage: 600V, Type of transistor: IGBT.
Weitere Produktangebote AIHD04N60RATMA1
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AIHD04N60RATMA1 | Hersteller : Infineon Technologies | Description: IC DISCRETE 600V TO252-3 |
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AIHD04N60RATMA1 | Hersteller : Infineon Technologies |
 IGBT Transistors DISCRETES |
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AIHD04N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Case: DPAK Kind of package: reel; tape Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Mounting: SMD Technology: TRENCHSTOP™ RC Turn-on time: 22ns Gate charge: 27nC Turn-off time: 317ns Collector current: 4A Pulsed collector current: 12A Gate-emitter voltage: ±20V Power dissipation: 75W Collector-emitter voltage: 600V Type of transistor: IGBT |
Produkt ist nicht verfügbar |