Technische Details AIHD04N60RATMA1 Infineon Technologies
Category: SMD IGBT transistors, Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK, Type of transistor: IGBT, Technology: TRENCHSTOP™ RC, Power dissipation: 75W, Case: DPAK, Mounting: SMD, Kind of package: reel; tape, Collector-emitter voltage: 600V, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), Gate charge: 27nC, Turn-on time: 22ns, Turn-off time: 317ns, Collector current: 4A, Pulsed collector current: 12A, Gate-emitter voltage: ±20V.
Weitere Produktangebote AIHD04N60RATMA1
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AIHD04N60RATMA1 | Hersteller : Infineon Technologies | Description: IC DISCRETE 600V TO252-3 |
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AIHD04N60RATMA1 | Hersteller : Infineon Technologies |
 IGBT Transistors DISCRETES |
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AIHD04N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 75W Case: DPAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 27nC Turn-on time: 22ns Turn-off time: 317ns Collector current: 4A Pulsed collector current: 12A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |