Technische Details AIHD10N60RFATMA1 Infineon Technologies
Category: SMD IGBT transistors, Description: Transistor: IGBT; 600V; 10A; 150W; DPAK, Type of transistor: IGBT, Technology: TRENCHSTOP™, Power dissipation: 150W, Case: DPAK, Mounting: SMD, Kind of package: reel; tape, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Collector-emitter voltage: 600V, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), Gate charge: 64nC, Turn-on time: 27ns, Turn-off time: 186ns, Collector current: 10A.
Weitere Produktangebote AIHD10N60RFATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
AIHD10N60RFATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 64nC Turn-on time: 27ns Turn-off time: 186ns Collector current: 10A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AIHD10N60RFATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH