Technische Details AIHD10N60RFATMA1 Infineon Technologies
Category: SMD IGBT transistors, Description: Transistor: IGBT; 600V; 10A; 150W; DPAK, Type of transistor: IGBT, Technology: TRENCHSTOP™, Power dissipation: 150W, Case: DPAK, Mounting: SMD, Kind of package: reel; tape, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Collector-emitter voltage: 600V, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), Gate charge: 64nC, Turn-on time: 27ns, Turn-off time: 186ns, Collector current: 10A, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote AIHD10N60RFATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
AIHD10N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 64nC Turn-on time: 27ns Turn-off time: 186ns Collector current: 10A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|
| AIHD10N60RFATMA1 | Hersteller : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 |
Produkt ist nicht verfügbar |
||
|
|
AIHD10N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Gate charge: 64nC Turn-on time: 27ns Turn-off time: 186ns Collector current: 10A |
Produkt ist nicht verfügbar |