Technische Details AIHD15N60RATMA1 Infineon Technologies
Category: SMD IGBT transistors, Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK, Type of transistor: IGBT, Technology: TRENCHSTOP™ RC, Power dissipation: 250W, Case: DPAK, Mounting: SMD, Gate charge: 90nC, Kind of package: reel; tape, Collector current: 15A, Pulsed collector current: 45A, Turn-on time: 26ns, Turn-off time: 319ns, Collector-emitter voltage: 600V, Gate-emitter voltage: ±20V, Features of semiconductor devices: reverse conducting IGBT (RC-IGBT), Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote AIHD15N60RATMA1
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AIHD15N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector current: 15A Pulsed collector current: 45A Turn-on time: 26ns Turn-off time: 319ns Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 2500 Stücke |
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AIHD15N60RATMA1 | Hersteller : Infineon Technologies | Description: IC DISCRETE 600V TO252-3 |
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AIHD15N60RATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors DISCRETES |
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AIHD15N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector current: 15A Pulsed collector current: 45A Turn-on time: 26ns Turn-off time: 319ns Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
Produkt ist nicht verfügbar |