| Anzahl | Preis |
|---|---|
| 1+ | 10.16 EUR |
| 10+ | 6.9 EUR |
| 100+ | 5.19 EUR |
| 480+ | 5.17 EUR |
| 1200+ | 4.77 EUR |
| 2640+ | 4.72 EUR |
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Technische Details AIKW40N65DH5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 250 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 74 A, Part Status: Active, Gate Charge: 95 nC, Test Condition: 400V, 20A, 15Ohm, 15V, Switching Energy: 350µJ (on), 100µJ (off), Td (on/off) @ 25°C: 19ns/165ns, IGBT Type: Trench, Supplier Device Package: PG-TO247-3-41, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote AIKW40N65DH5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AIKW40N65DH5XKSA1 | Infineon Technologies |
 Description: IGBT TRENCH 650V 74A TO247-3-41Qualification: AEC-Q101 Grade: Automotive Power - Max: 250 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 74 A Part Status: Active Gate Charge: 95 nC Test Condition: 400V, 20A, 15Ohm, 15V Switching Energy: 350µJ (on), 100µJ (off) Td (on/off) @ 25°C: 19ns/165ns IGBT Type: Trench Supplier Device Package: PG-TO247-3-41 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
AIKW40N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Turn-on time: 31ns Turn-off time: 164ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ 5 Manufacturer series: H5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AIKW40N65DH5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 350µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 19ns/165ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH 650V 74A TO247-3-41
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 350µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 19ns/165ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIKW40N65DH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH