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Technische Details AIKW50N65RF5XKSA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/156ns, Switching Energy: 310µJ (on), 120µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 109 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 250 W, Qualification: AEC-Q101.
Weitere Produktangebote AIKW50N65RF5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AIKW50N65RF5XKSA1 | Infineon Technologies |
 Description: IGBT TRENCH FS 650V 80A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/156ns Switching Energy: 310µJ (on), 120µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 109 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 720 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AIKW50N65RF5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 80A; 250W; TO247-3 Type of transistor: IGBT Technology: Field Stop; Trench Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Gate charge: 109nC Pulsed collector current: 150A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AIKW50N65RF5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/156ns
Switching Energy: 310µJ (on), 120µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 109 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIKW50N65RF5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 250W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Gate charge: 109nC
Pulsed collector current: 150A
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 250W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Gate charge: 109nC
Pulsed collector current: 150A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH