AIMBG120R030M1XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 70A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
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Technische Details AIMBG120R030M1XTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 70A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V, Power Dissipation (Max): 333W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 8.6mA, Supplier Device Package: PG-TO263-7-12, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMBG120R030M1XTMA1 nach Preis ab 14.38 EUR bis 39.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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AIMBG120R030M1XTMA1 | INFINEON |
Description: INFINEON - AIMBG120R030M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 1.2 kV, 0.038 ohm, TO-263HV tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 333W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263HV Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.038ohm |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMBG120R030M1XTMA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 70A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-TO263-7-12 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 1482 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMBG120R030M1XTMA1 | INFINEON |
Description: INFINEON - AIMBG120R030M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 1.2 kV, 0.038 ohm, TO-263HV tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 5.1V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 333W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263HV Anzahl der Pins: 7Pin(s) Produktpalette: CoolSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.038ohm |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
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AIMBG120R030M1XTMA1 | Infineon Technologies |
MOSFETs Y |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMBG120R030M1XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1.2kV; 70A; 333W; D2PAK-7 Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 70A Gate-source voltage: -5...23V Gate charge: 57nC On-state resistance: 38mΩ Power dissipation: 333W Application: automotive industry |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AIMBG120R030M1XTMA1 |
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Hersteller: INFINEON
Description: INFINEON - AIMBG120R030M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 1.2 kV, 0.038 ohm, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5.1V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 333W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263HV
Anzahl der Pins: 7Pin(s)
Produktpalette: CoolSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.038ohm
Description: INFINEON - AIMBG120R030M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 1.2 kV, 0.038 ohm, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5.1V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 333W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263HV
Anzahl der Pins: 7Pin(s)
Produktpalette: CoolSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.038ohm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 23.99 EUR |
| 12+ | 18.64 EUR |
| 50+ | 17.14 EUR |
| 100+ | 15.9 EUR |
| 250+ | 15.58 EUR |
| AIMBG120R030M1XTMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 70A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 70A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.67 EUR |
| 10+ | 20.25 EUR |
| 100+ | 18.55 EUR |
| AIMBG120R030M1XTMA1 |
|
Hersteller: INFINEON
Description: INFINEON - AIMBG120R030M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 1.2 kV, 0.038 ohm, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.1V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 333W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263HV
Anzahl der Pins: 7Pin(s)
Produktpalette: CoolSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.038ohm
Description: INFINEON - AIMBG120R030M1XTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 70 A, 1.2 kV, 0.038 ohm, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 70A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.1V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 333W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263HV
Anzahl der Pins: 7Pin(s)
Produktpalette: CoolSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.038ohm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 29.92 EUR |
| 10+ | 23.99 EUR |
| 12+ | 18.64 EUR |
| 50+ | 17.14 EUR |
| 100+ | 15.9 EUR |
| 250+ | 15.58 EUR |
| AIMBG120R030M1XTMA1 |
|
Hersteller: Infineon Technologies
MOSFETs Y
MOSFETs Y
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.4 EUR |
| 10+ | 34.72 EUR |
| 25+ | 33.81 EUR |
| 50+ | 31.89 EUR |
| 100+ | 30.04 EUR |
| 250+ | 29.1 EUR |
| 500+ | 28.13 EUR |
| AIMBG120R030M1XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 70A; 333W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 70A
Gate-source voltage: -5...23V
Gate charge: 57nC
On-state resistance: 38mΩ
Power dissipation: 333W
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 70A; 333W; D2PAK-7
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 70A
Gate-source voltage: -5...23V
Gate charge: 57nC
On-state resistance: 38mΩ
Power dissipation: 333W
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 14.38 EUR |