AIMBG75R090M1HXTMA1 Infineon Technologies

Description: AIMBG75R090M1HXTMA1, Current - Continuous Drain (Id) @ 25°C: 24A (Tj), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Grade: Automotive, Supplier Device Package: PG-TO263-7, Vgs(th) (Max) @ Id: 5.6V @ 2.6mA, Power Dissipation (Max): 128W (Tc), Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V.