AIMCQ120R080M1TXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
SiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture
| Anzahl | Preis |
|---|---|
| 1+ | 13.02 EUR |
| 10+ | 8.78 EUR |
| 100+ | 7.09 EUR |
| 500+ | 6.65 EUR |
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Technische Details AIMCQ120R080M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 5.1V @ 3.3mA, Power Dissipation (Max): 211W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote AIMCQ120R080M1TXTMA1 nach Preis ab 8.34 EUR bis 14.89 EUR
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AIMCQ120R080M1TXTMA1 | Infineon Technologies |
Description: SIC_DISCRETE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.1V @ 3.3mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) |
auf Bestellung 620 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R080M1TXTMA1 |
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Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.89 EUR |
| 10+ | 10.24 EUR |
| 100+ | 8.34 EUR |