AIMCQ120R080M1TXTMA1 Infineon Technologies

Description: SIC_DISCRETE, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 5.1V @ 3.3mA, Power Dissipation (Max): 211W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR).