AIMCQ120R160M1TXTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Mounting Type: Surface Mount
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Technische Details AIMCQ120R160M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 5.1V @ 1.5mA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V, Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Mounting Type: Surface Mount.
Weitere Produktangebote AIMCQ120R160M1TXTMA1 nach Preis ab 4.41 EUR bis 12.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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AIMCQ120R160M1TXTMA1 | Infineon Technologies |
Description: SIC_DISCRETETechnology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.1V @ 1.5mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) FET Type: N-Channel |
auf Bestellung 913 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMCQ120R160M1TXTMA1 | Infineon Technologies |
SiC MOSFETs SIC_DISCRETE |
auf Bestellung 1478 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AIMCQ120R160M1TXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
Description: SIC_DISCRETE
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
auf Bestellung 913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.79 EUR |
| 10+ | 7.9 EUR |
| 100+ | 5.69 EUR |
| AIMCQ120R160M1TXTMA1 |
![]() |
Hersteller: Infineon Technologies
SiC MOSFETs SIC_DISCRETE
SiC MOSFETs SIC_DISCRETE
auf Bestellung 1478 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.7 EUR |
| 10+ | 8.32 EUR |
| 100+ | 6.14 EUR |
| 500+ | 5.24 EUR |
| 750+ | 4.86 EUR |
| 2250+ | 4.57 EUR |
| 4500+ | 4.41 EUR |


