AIMCQ120R160M1TXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 9.08 EUR |
| 10+ | 6.09 EUR |
| 100+ | 4.38 EUR |
| 500+ | 4.05 EUR |
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Technische Details AIMCQ120R160M1TXTMA1 Infineon Technologies
Description: SIC_DISCRETE, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Grade: Automotive, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 5.1V @ 1.5mA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V, Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Mounting Type: Surface Mount.
Weitere Produktangebote AIMCQ120R160M1TXTMA1 nach Preis ab 6.45 EUR bis 12.27 EUR
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AIMCQ120R160M1TXTMA1 | Infineon Technologies |
 Description: SIC_DISCRETETechnology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Grade: Automotive Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 5.1V @ 1.5mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) FET Type: N-Channel |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| AIMCQ120R160M1TXTMA1 |
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Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
Description: SIC_DISCRETE
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.27 EUR |
| 10+ | 8.35 EUR |
| 100+ | 6.45 EUR |