AIMDQ75R020M1HXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: AIMDQ75R020M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 559 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.20 EUR |
| 10+ | 20.33 EUR |
| 100+ | 18.49 EUR |
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Technische Details AIMDQ75R020M1HXUMA1 Infineon Technologies
Description: AIMDQ75R020M1HXUMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 81A (Tj), Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 11.7mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMDQ75R020M1HXUMA1 nach Preis ab 21.47 EUR bis 31.06 EUR
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AIMDQ75R020M1HXUMA1 | Hersteller : Infineon Technologies |
SiC MOSFETs AUTOMOTIVE_SICMOS |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMDQ75R020M1HXUMA1 | Hersteller : Infineon Technologies |
Description: AIMDQ75R020M1HXUMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 11.7mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V Qualification: AEC-Q101 |
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