AIMDQ75R027M1HXUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 23.36 EUR |
| 10+ | 16.63 EUR |
| 100+ | 13.97 EUR |
| 500+ | 13.04 EUR |
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Technische Details AIMDQ75R027M1HXUMA1 Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tj), Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V, Power Dissipation (Max): 273W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 8.8mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote AIMDQ75R027M1HXUMA1 nach Preis ab 14.63 EUR bis 27.3 EUR
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AIMDQ75R027M1HXUMA1 | Hersteller : Infineon Technologies |
 Description: SICFET N-CH 750V PG-HDSOP-22Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 303 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMDQ75R027M1HXUMA1 | Hersteller : Infineon Technologies |
Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V Qualification: AEC-Q101 |
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