ALD114904SAL Advanced Linear Devices Inc.
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V
FET Feature: Depletion Mode
Vgs(th) (Max) @ Id: 360mV @ 1µA
Supplier Device Package: 8-SOIC
Part Status: Active
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Technische Details ALD114904SAL Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA, Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V, Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V, FET Feature: Depletion Mode, Vgs(th) (Max) @ Id: 360mV @ 1µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote ALD114904SAL nach Preis ab 6.37 EUR bis 14.8 EUR
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ALD114904SAL | Advanced Linear Devices |
MOSFETs Dual EPAD(R) N-Ch |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| ALD114904SAL |
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Hersteller: Advanced Linear Devices
MOSFETs Dual EPAD(R) N-Ch
MOSFETs Dual EPAD(R) N-Ch
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.8 EUR |
| 10+ | 7.9 EUR |
| 100+ | 7.2 EUR |
| 500+ | 6.37 EUR |