ALD210808PCL Advanced Linear Devices
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.15 EUR |
| 10+ | 13.51 EUR |
| 100+ | 11.25 EUR |
| 500+ | 10.03 EUR |
| 1000+ | 9.4 EUR |
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Technische Details ALD210808PCL Advanced Linear Devices
Description: MOSFET 4N-CH 10.6V 0.08A 16PDIP, Packaging: Tube, Package / Case: 16-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 20mV @ 10µA, Supplier Device Package: 16-PDIP.
Weitere Produktangebote ALD210808PCL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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ALD210808PCL | Advanced Linear Devices Inc. |
 Description: MOSFET 4N-CH 10.6V 0.08A 16PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 4 N-Channel, Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 10µA Supplier Device Package: 16-PDIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ALD210808PCL |
|
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 4N-CH 10.6V 0.08A 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Description: MOSFET 4N-CH 10.6V 0.08A 16PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel, Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 10µA
Supplier Device Package: 16-PDIP
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH