ALD212900PAL Advanced Linear Devices
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.97 EUR |
| 10+ | 11.58 EUR |
| 50+ | 7.99 EUR |
| 100+ | 7.32 EUR |
| 250+ | 7.29 EUR |
| 500+ | 6.34 EUR |
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Technische Details ALD212900PAL Advanced Linear Devices
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Rds On (Max) @ Id, Vgs: 14Ohm, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 20mV @ 20µA, Supplier Device Package: 8-PDIP, Part Status: Active.
Weitere Produktangebote ALD212900PAL nach Preis ab 13.97 EUR bis 13.97 EUR
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ALD212900PAL | Hersteller : Advanced Linear Devices Inc. |
 Description: MOSFET 2N-CH 10.6V 0.08A 8PDIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Matched Pair Operating Temperature: 0°C ~ 70°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Rds On (Max) @ Id, Vgs: 14Ohm FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 20mV @ 20µA Supplier Device Package: 8-PDIP Part Status: Active |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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