ALD212900PAL Advanced Linear Devices Inc.
Hersteller: Advanced Linear Devices Inc.Description: MOSFET 2N-CH 10.6V 0.08A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 20µA
Supplier Device Package: 8-PDIP
Part Status: Active
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.72 EUR |
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Technische Details ALD212900PAL Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Rds On (Max) @ Id, Vgs: 14Ohm, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 20mV @ 20µA, Supplier Device Package: 8-PDIP, Part Status: Active.
Weitere Produktangebote ALD212900PAL nach Preis ab 6.2 EUR bis 11.65 EUR
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ALD212900PAL | Hersteller : Advanced Linear Devices |
MOSFET Dual N-Ch EPAD FET Array VGS=0.0V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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