ALD212900PAL Advanced Linear Devices Inc.
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP
Part Status: Active
Supplier Device Package: 8-PDIP
Vgs(th) (Max) @ Id: 20mV @ 20µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 14Ohm
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 80mA
Drain to Source Voltage (Vdss): 10.6V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 0°C ~ 70°C (TJ)
Configuration: 2 N-Channel (Dual) Matched Pair
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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Technische Details ALD212900PAL Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8PDIP, Part Status: Active, Supplier Device Package: 8-PDIP, Vgs(th) (Max) @ Id: 20mV @ 20µA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 14Ohm, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Current - Continuous Drain (Id) @ 25°C: 80mA, Drain to Source Voltage (Vdss): 10.6V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 0°C ~ 70°C (TJ), Configuration: 2 N-Channel (Dual) Matched Pair, Mounting Type: Through Hole, Package / Case: 8-DIP (0.300", 7.62mm), Packaging: Tube.
Weitere Produktangebote ALD212900PAL nach Preis ab 8.03 EUR bis 16.63 EUR
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ALD212900PAL | Advanced Linear Devices |
MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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| ALD212900PAL |
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Hersteller: Advanced Linear Devices
MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 16.63 EUR |
| 10+ | 9.29 EUR |
| 100+ | 8.54 EUR |
| 500+ | 8.03 EUR |