ALD212900SAL Advanced Linear Devices
| Anzahl | Preis |
|---|---|
| 1+ | 13.52 EUR |
| 10+ | 10.82 EUR |
| 100+ | 8.75 EUR |
| 500+ | 7.78 EUR |
| 1000+ | 6.88 EUR |
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Technische Details ALD212900SAL Advanced Linear Devices
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC, Rds On (Max) @ Id, Vgs: 14Ohm, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Current - Continuous Drain (Id) @ 25°C: 80mA, Drain to Source Voltage (Vdss): 10.6V, Power - Max: 500mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 0°C ~ 70°C (TJ), Configuration: 2 N-Channel (Dual) Matched Pair, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 20mV @ 20µA, FET Feature: Logic Level Gate.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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ALD212900SAL | Advanced Linear Devices Inc. |
 Description: MOSFET 2N-CH 10.6V 0.08A 8SOICRds On (Max) @ Id, Vgs: 14Ohm Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V Current - Continuous Drain (Id) @ 25°C: 80mA Drain to Source Voltage (Vdss): 10.6V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: 0°C ~ 70°C (TJ) Configuration: 2 N-Channel (Dual) Matched Pair Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 20mV @ 20µA FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ALD212900SAL |
|
Hersteller: Advanced Linear Devices Inc.
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Rds On (Max) @ Id, Vgs: 14Ohm
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 80mA
Drain to Source Voltage (Vdss): 10.6V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 0°C ~ 70°C (TJ)
Configuration: 2 N-Channel (Dual) Matched Pair
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 20mV @ 20µA
FET Feature: Logic Level Gate
Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Rds On (Max) @ Id, Vgs: 14Ohm
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 80mA
Drain to Source Voltage (Vdss): 10.6V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 0°C ~ 70°C (TJ)
Configuration: 2 N-Channel (Dual) Matched Pair
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 20mV @ 20µA
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH