ALD212900SAL

ALD212900SAL Advanced Linear Devices


ALD212900-225961.pdf Hersteller: Advanced Linear Devices
MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
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Technische Details ALD212900SAL Advanced Linear Devices

Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Matched Pair, Operating Temperature: 0°C ~ 70°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 10.6V, Current - Continuous Drain (Id) @ 25°C: 80mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V, Rds On (Max) @ Id, Vgs: 14Ohm, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 20mV @ 20µA, Supplier Device Package: 8-SOIC.

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ALD212900SAL ALD212900SAL Hersteller : Advanced Linear Devices Inc. ALD212900.pdf Description: MOSFET 2N-CH 10.6V 0.08A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Matched Pair
Operating Temperature: 0°C ~ 70°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
Rds On (Max) @ Id, Vgs: 14Ohm
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 20mV @ 20µA
Supplier Device Package: 8-SOIC
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