AMJD31C-HF Comchip Technology
Hersteller: Comchip Technology
Description: TRANS 100V 3A TO-252-2
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-252-2
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details AMJD31C-HF Comchip Technology
Description: TRANS 100V 3A TO-252-2, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 1.25 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: TO-252-2, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote AMJD31C-HF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
AMJD31C-HF | Comchip Technology |
Bipolar Transistors - BJT AUTOMOTIVE TRANS SILICON EPITAXIAL PLANAR NPN 100V 3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AMJD31C-HF |
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Hersteller: Comchip Technology
Bipolar Transistors - BJT AUTOMOTIVE TRANS SILICON EPITAXIAL PLANAR NPN 100V 3A
Bipolar Transistors - BJT AUTOMOTIVE TRANS SILICON EPITAXIAL PLANAR NPN 100V 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH


