Technische Details AO3160 Alpha & Omega Semiconductor
Description: MOSFET N-CH 600V 40MA SOT23-3, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SOT-23A-3, Vgs(th) (Max) @ Id: 3.2V @ 8µA, Power Dissipation (Max): 1.39W (Ta), Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V, Current - Continuous Drain (Id) @ 25°C: 40mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote AO3160 nach Preis ab 0.17 EUR bis 0.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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AO3160 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 0.04A 3-Pin SOT-23A |
auf Bestellung 1815 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3160 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30mA Power dissipation: 0.89W Case: SOT23A-3 Gate-source voltage: ±20V On-state resistance: 500Ω Mounting: SMD Gate charge: 1nC Kind of channel: enhancement |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
|
| AO3160 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 0.04A 3-Pin SOT-23A
Trans MOSFET N-CH 600V 0.04A 3-Pin SOT-23A
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 999+ | 0.17 EUR |
| AO3160 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30mA
Power dissipation: 0.89W
Case: SOT23A-3
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.03A; 0.89W; SOT23A-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30mA
Power dissipation: 0.89W
Case: SOT23A-3
Gate-source voltage: ±20V
On-state resistance: 500Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 270+ | 0.32 EUR |



