AO3409
Produktcode: 181369
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Weitere Produktangebote AO3409 nach Preis ab 0.12 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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AO3409 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3409 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3409 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 2.6A SOT23-3L Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3409 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 2.2nC Kind of channel: enhancement Power dissipation: 1W |
auf Bestellung 699 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3409 | ALPHA&OMEGA |
Transistor P-Channel MOSFET; 30V; 20V; 180mOhm; 2,6A; 1,4W; -55°C ~ 150°C; AO3409 TAO3409 Anzahl je Verpackung: 100 Stücke |
auf Bestellung 235 Stücke: Lieferzeit 7-14 Tag (e) |
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AO3409 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 2.6A SOT23-3L Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V |
auf Bestellung 15593 Stücke: Lieferzeit 10-14 Tag (e) |
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| AO3409 | Alpha? Semiconductor |
P-канальний ПТ, Udss, В = 30, Id = 2,6 А, Ciss, пФ @ Uds, В = 370, Qg, нКл = 9, Rds = 130 мОм, Ugs(th) = 3, Р, Вт = 1,4, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 5 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| AO3409 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| AO3409 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| AO3409 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.6A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
Description: MOSFET P-CH 30V 2.6A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| AO3409 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of channel: enhancement
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of channel: enhancement
Power dissipation: 1W
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 385+ | 0.23 EUR |
| 451+ | 0.19 EUR |
| 499+ | 0.17 EUR |
| 592+ | 0.14 EUR |
| 677+ | 0.13 EUR |
| 699+ | 0.12 EUR |
| AO3409 |
|
Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 20V; 180mOhm; 2,6A; 1,4W; -55°C ~ 150°C; AO3409 TAO3409
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 180mOhm; 2,6A; 1,4W; -55°C ~ 150°C; AO3409 TAO3409
Anzahl je Verpackung: 100 Stücke
auf Bestellung 235 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.27 EUR |
| AO3409 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.6A SOT23-3L
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
Description: MOSFET P-CH 30V 2.6A SOT23-3L
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 15 V
auf Bestellung 15593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 41+ | 0.52 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| AO3409 |
|
Hersteller: Alpha? Semiconductor
P-канальний ПТ, Udss, В = 30, Id = 2,6 А, Ciss, пФ @ Uds, В = 370, Qg, нКл = 9, Rds = 130 мОм, Ugs(th) = 3, Р, Вт = 1,4, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 30, Id = 2,6 А, Ciss, пФ @ Uds, В = 370, Qg, нКл = 9, Rds = 130 мОм, Ugs(th) = 3, Р, Вт = 1,4, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 5 Stücke: