AO3413A UMW
Hersteller: UMWDescription: SOT-23-3 POWER MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 10 V
auf Bestellung 2560 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 37+ | 0.48 EUR |
| 45+ | 0.39 EUR |
| 100+ | 0.3 EUR |
| 250+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |
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Technische Details AO3413A UMW
Description: SOT-23-3 POWER MOSFETS ROHS, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 66mOhm @ 3A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 10 V.
Weitere Produktangebote AO3413A nach Preis ab 0.1 EUR bis 0.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| AO3413A | Hersteller : UMW |
Transistor P-Channel MOSFET; 20V; 8V; 80mOhm; 3A; 1,4W; -55°C ~ 150°C; Equivalent: AO3413 Alpha&Omega Semiconductor AOS; AO3413A UMW TAO3413a UMW Anzahl je Verpackung: 250 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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AO3413A | Hersteller : UMW |
Description: SOT-23-3 POWER MOSFETS ROHS Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 3A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 10 V |
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