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AO3413L ALPHA



Hersteller: ALPHA
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Technische Details AO3413L ALPHA

Description: MOSFET P-CH 20V 3A SOT23-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, SOT-23-3 Variant, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 97mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel.

Weitere Produktangebote AO3413L

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AO3413L Alpha & Omega Semiconductor Inc. Description: MOSFET P-CH 20V 3A SOT23-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 97mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AO3413L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3A SOT23-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, SOT-23-3 Variant
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 97mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH