
AO3414 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 20V 3A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V
auf Bestellung 370800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.12 EUR |
6000+ | 0.11 EUR |
15000+ | 0.1 EUR |
21000+ | 0.095 EUR |
30000+ | 0.092 EUR |
75000+ | 0.083 EUR |
150000+ | 0.079 EUR |
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Technische Details AO3414 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 3A SOT23-3L, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, SOT-23-3 Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V.
Weitere Produktangebote AO3414 nach Preis ab 0.066 EUR bis 0.58 EUR
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AO3414 | Hersteller : Alpha & Omega Semiconductor |
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auf Bestellung 2487 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3414 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 85mΩ Mounting: SMD Gate charge: 3.8nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4452 Stücke: Lieferzeit 7-14 Tag (e) |
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AO3414 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 85mΩ Mounting: SMD Gate charge: 3.8nC Kind of channel: enhancement |
auf Bestellung 4452 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3414 | Hersteller : Alpha & Omega Semiconductor |
![]() |
auf Bestellung 2487 Stücke: Lieferzeit 14-21 Tag (e) |
|
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AO3414 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V |
auf Bestellung 371280 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3414 Produktcode: 130979
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AO3414 | Hersteller : Alpha & Omega Semiconductor |
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