Weitere Produktangebote AO3414 nach Preis ab 0.098 EUR bis 0.82 EUR
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AO3414 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 20V 3A SOT23-3LPackaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V |
auf Bestellung 234000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3414 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 3A 3-Pin SOT-23 |
auf Bestellung 2260 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3414 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 3A 3-Pin SOT-23 |
auf Bestellung 2260 Stücke: Lieferzeit 14-21 Tag (e) |
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AO3414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 3A SOT23-3L Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V |
auf Bestellung 235133 Stücke: Lieferzeit 10-14 Tag (e) |
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AO3414 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 900mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 85mΩ Mounting: SMD Gate charge: 3.8nC Kind of channel: enhancement |
auf Bestellung 6134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AO3414 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 20V; 8V; 85mOhm; 3A; 1,4W; -55°C ~ 150°C; AO3414 TAO3414 Anzahl je Verpackung: 100 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
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| AO3414 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 3A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V
Description: MOSFET N-CH 20V 3A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V
auf Bestellung 234000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| 9000+ | 0.15 EUR |
| AO3414 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 3A 3-Pin SOT-23
Trans MOSFET N-CH 20V 3A 3-Pin SOT-23
auf Bestellung 2260 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 572+ | 0.31 EUR |
| 661+ | 0.26 EUR |
| 905+ | 0.19 EUR |
| 1425+ | 0.12 EUR |
| AO3414 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 3A 3-Pin SOT-23
Trans MOSFET N-CH 20V 3A 3-Pin SOT-23
auf Bestellung 2260 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 248+ | 0.73 EUR |
| 409+ | 0.42 EUR |
| 572+ | 0.29 EUR |
| 661+ | 0.24 EUR |
| 668+ | 0.23 EUR |
| 905+ | 0.17 EUR |
| 1425+ | 0.098 EUR |
| AO3414 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 3A SOT23-3L
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V
Description: MOSFET N-CH 20V 3A SOT23-3L
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 10 V
auf Bestellung 235133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 43+ | 0.5 EUR |
| 59+ | 0.36 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.24 EUR |
| AO3414 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 900mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 900mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of channel: enhancement
auf Bestellung 6134 Stücke:
Lieferzeit 14-21 Tag (e)
| AO3414 |
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Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 20V; 8V; 85mOhm; 3A; 1,4W; -55°C ~ 150°C; AO3414 TAO3414
Anzahl je Verpackung: 100 Stücke
Transistor N-Channel MOSFET; 20V; 8V; 85mOhm; 3A; 1,4W; -55°C ~ 150°C; AO3414 TAO3414
Anzahl je Verpackung: 100 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.3 EUR |