AO3420 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 6A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
auf Bestellung 765000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
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Technische Details AO3420 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6A SOT23-3L, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, SOT-23-3 Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10.
Weitere Produktangebote AO3420 nach Preis ab 0.12 EUR bis 0.86 EUR
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AO3420 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 6A SOT23-3L Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
auf Bestellung 765811 Stücke: Lieferzeit 10-14 Tag (e) |
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| AO3420 | Hersteller : HOTTECH |
Transistor N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 SOT23-3L TAO3420 c Anzahl je Verpackung: 100 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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| AO3420 | Hersteller : ALPHA&OMEGA |
N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 TAO3420 Anzahl je Verpackung: 100 Stücke |
auf Bestellung 988 Stücke: Lieferzeit 7-14 Tag (e) |
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AO3420 Produktcode: 205289
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AO3420 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; 0.9W; SOT23 Case: SOT23 Drain-source voltage: 20V Drain current: 5A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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AO3420 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; 0.9W; SOT23 Case: SOT23 Drain-source voltage: 20V Drain current: 5A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD |
Produkt ist nicht verfügbar |