AO3420

Hersteller: HXY MOSFET
Transistor N-Channel MOSFET; 20V; 12V; 40mOhm; 6,5A; 1,4W; -55°C ~ 150°C; Equivalent: AO3420 Alpha&Omega Semiconductor AOS; AO3420 HXY MOSFET TAO3420 HXY
Anzahl je Verpackung: 250 Stücke

Hersteller: HOTTECH
Transistor N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 SOT23-3L TAO3420 c
Anzahl je Verpackung: 100 Stücke

Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; 0.9W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Gate charge: 12.5nC
On-state resistance: 55mΩ
Power dissipation: 0.9W
Drain current: 5A
Gate-source voltage: ±12V
Drain-source voltage: 20V

Hersteller: ALPHA&OMEGA
N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 TAO3420
Anzahl je Verpackung: 3000 Stücke

Hersteller: ALPHA&OMEGA
N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 TAO3420
Anzahl je Verpackung: 3000 Stücke

Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10

Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6A SOT23-3L
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10