Technische Details AO4427 AO
Description: MOSFET P-CH 30V 12.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 20V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V.
Weitere Produktangebote AO4427
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| AO4427 | Hersteller : AO |
 SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| AO4427 | Hersteller : AOSMD |
|
auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
AO4427 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 12.5A 8-Pin SOIC |
Produkt ist nicht verfügbar |
|
 |
AO4427 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 20V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V |
Produkt ist nicht verfügbar |
|
|
|
AO4427 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 12.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 20V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V |
Produkt ist nicht verfügbar |