AO4441 Alpha & Omega Semiconductor
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.23 EUR |
| 30000+ | 0.22 EUR |
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Technische Details AO4441 Alpha & Omega Semiconductor
Description: MOSFET P-CH 60V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V.
Weitere Produktangebote AO4441 nach Preis ab 0.22 EUR bis 1.02 EUR
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AO4441 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 60V 4A 8-Pin SOIC |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4441 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 60V 4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4441 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.1A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3946 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4441 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.1A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 8nC Kind of channel: enhanced |
auf Bestellung 3946 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4441 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 60V 4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V |
auf Bestellung 14082 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4441 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 4A 8-Pin SOIC |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4441 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 4A 8-Pin SOIC |
Produkt ist nicht verfügbar |