AO4441 UMW
Hersteller: UMW
Transistor P-Channel MOSFET; 60V; 20V; 130mOhm; 4A; 3,1W; -55°C ~ 150°C; Equivalent: AO4441 Alpha&Omega Semiconductor AOS; AO4441 UMW TAO4441 UMW
Anzahl je Verpackung: 100 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AO4441 UMW
Description: MOSFET P-CH 60V 4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V.
Weitere Produktangebote AO4441 nach Preis ab 0.22 EUR bis 1.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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AO4441 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 60V 4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4441 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 4A 8-Pin SOIC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4441 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 60V 4A 8-Pin SOIC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4441 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.1A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 8nC Kind of channel: enhancement |
auf Bestellung 1309 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4441 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 60V 4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V |
auf Bestellung 5108 Stücke: Lieferzeit 10-14 Tag (e) |
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| AO4441 | Alpha? Semiconductor |
P-канальний ПТ, Udss, В = 60, Id = 4 А, Ciss, пФ @ Uds, В = 1120 @ 30, Qg, нКл = 20, Rds = 100 мОм, Ugs(th) = 3 В, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOIC-8 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 5 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| AO4441 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V
Description: MOSFET P-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.38 EUR |
| AO4441 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 60V 4A 8-Pin SOIC
Trans MOSFET P-CH 60V 4A 8-Pin SOIC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.43 EUR |
| AO4441 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 60V 4A 8-Pin SOIC
Trans MOSFET P-CH 60V 4A 8-Pin SOIC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.43 EUR |
| AO4441 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.1A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.1A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.1A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
auf Bestellung 1309 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 239+ | 0.3 EUR |
| 262+ | 0.27 EUR |
| 275+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
| AO4441 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V
Description: MOSFET P-CH 60V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 30 V
auf Bestellung 5108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.51 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| AO4441 |
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Hersteller: Alpha? Semiconductor
P-канальний ПТ, Udss, В = 60, Id = 4 А, Ciss, пФ @ Uds, В = 1120 @ 30, Qg, нКл = 20, Rds = 100 мОм, Ugs(th) = 3 В, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOIC-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
P-канальний ПТ, Udss, В = 60, Id = 4 А, Ciss, пФ @ Uds, В = 1120 @ 30, Qg, нКл = 20, Rds = 100 мОм, Ugs(th) = 3 В, Р, Вт = 3,1, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOIC-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 5 Stücke: