AO4447A Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 17A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
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Technische Details AO4447A Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 17A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V.
Weitere Produktangebote AO4447A nach Preis ab 0.54 EUR bis 3.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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AO4447A | UMW |
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; Equivalent: AO4447A Alpha&Omega Semiconductor AOS; AO4447A UMW TAO4447a UMW Anzahl je Verpackung: 25 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4447A | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 41nC Kind of channel: enhancement |
auf Bestellung 2969 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4447A | ALPHA&OMEGA |
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; AO4447A TAO4447a Anzahl je Verpackung: 25 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4447A | ALPHA&OMEGA |
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; AO4447A TAO4447a Anzahl je Verpackung: 25 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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AO4447A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 17A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V |
auf Bestellung 7687 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4447A | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AO4447A | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| AO4447A |
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auf Bestellung 88000 Stücke: Lieferzeit 18-25 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AO4447A |
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Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; Equivalent: AO4447A Alpha&Omega Semiconductor AOS; AO4447A UMW TAO4447a UMW
Anzahl je Verpackung: 25 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; Equivalent: AO4447A Alpha&Omega Semiconductor AOS; AO4447A UMW TAO4447a UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.99 EUR |
| AO4447A |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 114+ | 0.75 EUR |
| 143+ | 0.6 EUR |
| 158+ | 0.54 EUR |
| AO4447A |
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Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; AO4447A TAO4447a
Anzahl je Verpackung: 25 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; AO4447A TAO4447a
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.39 EUR |
| AO4447A |
|
Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; AO4447A TAO4447a
Anzahl je Verpackung: 25 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 8,2mOhm; 18,5A; 3,1W; -55°C ~ 150°C; AO4447A TAO4447a
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.39 EUR |
| AO4447A |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 17A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
Description: MOSFET P-CH 30V 17A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
auf Bestellung 7687 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |
| AO4447A |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
| AO4447A |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 18.5A 8-Pin SOIC T/R
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)