AO4496 ALPHA & OMEGA SEMICONDUCTOR
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 145+ | 0.49 EUR |
| 226+ | 0.31 EUR |
| 3000+ | 0.2 EUR |
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Technische Details AO4496 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N CH 30V 10A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 15 V.
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AO4496 Produktcode: 89288
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AO4496 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 30V 10A 8-Pin SOIC |
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AO4496 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 10A 8-Pin SOIC |
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AO4496 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 30V 10A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 15 V |
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AO4496 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N CH 30V 10A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 15 V |
Produkt ist nicht verfügbar |