AO4611 Alpha & Omega Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 206+ | 0.87 EUR |
| 207+ | 0.84 EUR |
| 208+ | 0.82 EUR |
| 250+ | 0.81 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.77 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
206 Stücke
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Technische Details AO4611 Alpha & Omega Semiconductor
Description: MOSFET N/P-CH 60V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V, 2900pF @ 30V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote AO4611 nach Preis ab 0.9 EUR bis 3.69 EUR
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AO4611 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N/P-CH 60V 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V, 2900pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4611 | Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 60V 6.3A/4.9A 8-Pin SOIC |
auf Bestellung 1143 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 60V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V, 2900pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 13987 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4611 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 5/-3.9A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±20V On-state resistance: 25/42mΩ Mounting: SMD Gate charge: 24.2/22.8nC Kind of channel: enhancement |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AO4611 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V, 2900pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V, 2900pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.01 EUR |
| 9000+ | 0.9 EUR |
| AO4611 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N/P-CH 60V 6.3A/4.9A 8-Pin SOIC
Trans MOSFET N/P-CH 60V 6.3A/4.9A 8-Pin SOIC
auf Bestellung 1143 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 3.55 EUR |
| 79+ | 2.18 EUR |
| 105+ | 1.58 EUR |
| 117+ | 1.36 EUR |
| 500+ | 1.04 EUR |
| AO4611 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V, 2900pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V, 2900pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 13987 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.69 EUR |
| 10+ | 2.34 EUR |
| 50+ | 1.76 EUR |
| 100+ | 1.58 EUR |
| 500+ | 1.25 EUR |
| AO4611 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5/-3.9A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 25/42mΩ
Mounting: SMD
Gate charge: 24.2/22.8nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 5/-3.9A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 25/42mΩ
Mounting: SMD
Gate charge: 24.2/22.8nC
Kind of channel: enhancement
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)