Technische Details AO4701 AO
Description: MOSFET P-CH 30V 5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 952 pF @ 15 V.
Weitere Produktangebote AO4701
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| AO4701 | Hersteller : AO |
 SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AO4701 | Hersteller : AOS |
SO-8 |
auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AO4701 | Hersteller : AOSMD |
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auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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AO4701 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 952 pF @ 15 V |
Produkt ist nicht verfügbar |
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AO4701 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 952 pF @ 15 V |
Produkt ist nicht verfügbar |