Technische Details AO4710 AO
Description: MOSFET N-CH 30V 12.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), Rds On (Max) @ Id, Vgs: 11.8mOhm @ 12.7A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2376 pF @ 15 V.
Weitere Produktangebote AO4710
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| AO4710 | Hersteller : AO |
 SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| AO4710 | Hersteller : AO |
SOP8 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| AO4710 | Hersteller : AOS |
09+ SOP-8 |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| AO4710 | Hersteller : AOSMD |
|
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
AO4710 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 12.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2376 pF @ 15 V |
Produkt ist nicht verfügbar |
|
|
|
AO4710 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 12.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 12.7A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2376 pF @ 15 V |
Produkt ist nicht verfügbar |