AO4807 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 6A 8SOIC
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details AO4807 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 6A 8SOIC, Part Status: Not For New Designs, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote AO4807 nach Preis ab 0.3 EUR bis 2.56 EUR
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AO4807 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -5A; 1.3W; SO8 Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Gate charge: 6.7nC On-state resistance: 35mΩ Power dissipation: 1.3W Gate-source voltage: ±20V |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4807 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 6A 8SOIC Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V |
auf Bestellung 7039 Stücke: Lieferzeit 10-14 Tag (e) |
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| AO4807 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; 1.3W; SO8
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Gate charge: 6.7nC
On-state resistance: 35mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; 1.3W; SO8
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Gate charge: 6.7nC
On-state resistance: 35mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 1.04 EUR |
| 212+ | 0.4 EUR |
| 240+ | 0.36 EUR |
| 268+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| AO4807 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 6A 8SOIC
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Description: MOSFET 2P-CH 30V 6A 8SOIC
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
auf Bestellung 7039 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 14+ | 1.61 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |