AO4807 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.61 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
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Produktbewertung abgeben
Technische Details AO4807 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Not For New Designs.
Weitere Produktangebote AO4807 nach Preis ab 0.75 EUR bis 2.56 EUR
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AO4807 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs |
auf Bestellung 7039 Stücke: Lieferzeit 10-14 Tag (e) |
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AO4807 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -5A; 1.3W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 6.7nC Kind of channel: enhancement |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AO4807 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
auf Bestellung 7039 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 14+ | 1.61 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| AO4807 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; 1.3W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; 1.3W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhancement
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)