AO4862E ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; 1.1W; SO8; ESD
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.1W
Polarisation: unipolar
Version: ESD
Gate charge: 2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 192 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| 192+ | 0.37 EUR |
| 208+ | 0.34 EUR |
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Technische Details AO4862E ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 4.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V, Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote AO4862E nach Preis ab 0.37 EUR bis 0.44 EUR
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AO4862E | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; 1.1W; SO8; ESD Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 46mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.1W Polarisation: unipolar Version: ESD Gate charge: 2nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) |
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AO4862E | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC |
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