AO4884 ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
Transistor 2xN-Channel MOSFET; 40V; 20V; 20mOhm; 10A; 2W; -55°C ~ 150°C; AO4884 TAO4884
Anzahl je Verpackung: 25 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.36 EUR |
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Lieferzeit:
7-14 Tag (e)
Mindestmenge:
15 Stücke
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Technische Details AO4884 ALPHA&OMEGA
Description: MOSFET 2N-CH 40V 10A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V, Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote AO4884
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AO4884 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 8A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 13.6nC Kind of channel: enhancement |
auf Bestellung 2210 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AO4884 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 8A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of channel: enhancement
auf Bestellung 2210 Stücke:
Lieferzeit 14-21 Tag (e)