AO8808A
Produktcode: 109623
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Weitere Produktangebote AO8808A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AO8808A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.3A; Idm: 30A; 1.08W Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.08W Case: TSSOP8 Mounting: SMD Drain current: 6.3A Pulsed drain current: 30A On-state resistance: 27mΩ Gate charge: 17.9nC Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Semiconductor structure: common drain |
auf Bestellung 1251 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AO8808A |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.3A; Idm: 30A; 1.08W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.08W
Case: TSSOP8
Mounting: SMD
Drain current: 6.3A
Pulsed drain current: 30A
On-state resistance: 27mΩ
Gate charge: 17.9nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.3A; Idm: 30A; 1.08W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.08W
Case: TSSOP8
Mounting: SMD
Drain current: 6.3A
Pulsed drain current: 30A
On-state resistance: 27mΩ
Gate charge: 17.9nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Semiconductor structure: common drain
auf Bestellung 1251 Stücke:
Lieferzeit 14-21 Tag (e)