AO9926C ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.1A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.1A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
175+ | 0.41 EUR |
181+ | 0.4 EUR |
221+ | 0.32 EUR |
234+ | 0.31 EUR |
3000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AO9926C ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 20V 7.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.6A, Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V, Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote AO9926C nach Preis ab 0.31 EUR bis 0.41 EUR
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AO9926C | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.1A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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AO9926C | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 7.6A 8-Pin SOIC |
Produkt ist nicht verfügbar |
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AO9926C | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 7.6A 8-Pin SOIC |
Produkt ist nicht verfügbar |
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AO9926C | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 7.6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.6A Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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AO9926C | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 7.6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.6A Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 7.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |