Weitere Produktangebote AOB25S65L nach Preis ab 2.76 EUR bis 7.43 EUR
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AOB25S65L | Hersteller : Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 650V 25A TO263Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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AOB25S65L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 25A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V |
auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOB25S65L | Hersteller : AOS |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |