AOB25S65L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.76 EUR |
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Technische Details AOB25S65L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 25A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V.
Weitere Produktangebote AOB25S65L nach Preis ab 3.5 EUR bis 7.43 EUR
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AOB25S65L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB25S65L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 25A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V |
auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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AOB25S65L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB25S65L Produktcode: 173627
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AOB25S65L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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AOB25S65L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| AOB25S65L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25A; Idm: 104A; 357W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 25A Pulsed drain current: 104A Power dissipation: 357W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 26.4nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |