
AOB270AL ALPHA & OMEGA SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 110A; 250W; TO263
Case: TO263
Drain-source voltage: 75V
Drain current: 110A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 147nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 685 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
27+ | 2.67 EUR |
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Technische Details AOB270AL ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 75V 21.5A/140A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 500W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V.
Weitere Produktangebote AOB270AL nach Preis ab 2.67 EUR bis 2.67 EUR
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AOB270AL | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 110A; 250W; TO263 Case: TO263 Drain-source voltage: 75V Drain current: 110A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 147nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB270AL | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AOB270AL | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V |
Produkt ist nicht verfügbar |