AOB27S60L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 27A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
auf Bestellung 12800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.1 EUR |
| 1600+ | 3.03 EUR |
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Technische Details AOB27S60L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 27A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V.
Weitere Produktangebote AOB27S60L nach Preis ab 2.47 EUR bis 8.32 EUR
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AOB27S60L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 40W Gate charge: 26nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 786 Stücke: Lieferzeit 7-14 Tag (e) |
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AOB27S60L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 40W Gate charge: 26nC |
auf Bestellung 786 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB27S60L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 27A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V |
auf Bestellung 13951 Stücke: Lieferzeit 10-14 Tag (e) |
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AOB27S60L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB27S60L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB27S60L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |