AOB27S60L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 27A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details AOB27S60L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 27A TO263, Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 357W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOB27S60L nach Preis ab 3 EUR bis 10.39 EUR
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AOB27S60L | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263 Power dissipation: 40W Gate charge: 26nC Polarisation: unipolar Drain current: 17A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO263 On-state resistance: 0.16Ω Mounting: SMD |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB27S60L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 27A TO263 Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 9866 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOB27S60L |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263
Power dissipation: 40W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 0.16Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263
Power dissipation: 40W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Case: TO263
On-state resistance: 0.16Ω
Mounting: SMD
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.19 EUR |
| 23+ | 3.76 EUR |
| 26+ | 3.32 EUR |
| 100+ | 3 EUR |
| AOB27S60L |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 27A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 27A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 9866 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.39 EUR |
| 10+ | 6.91 EUR |
| 50+ | 5.43 EUR |
| 100+ | 4.94 EUR |