AOB280L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 80V
Drain current: 110A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 166.5W
Polarisation: unipolar
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 80V
Drain current: 110A
On-state resistance: 2.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 166.5W
Polarisation: unipolar
Gate charge: 160nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 766 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 4 EUR |
21+ | 3.55 EUR |
24+ | 3.09 EUR |
25+ | 2.92 EUR |
800+ | 2.8 EUR |
Produktrezensionen
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Technische Details AOB280L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 80V 20.5A/140A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 333W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V.
Weitere Produktangebote AOB280L nach Preis ab 2.92 EUR bis 4 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOB280L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 80V Drain current: 110A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Power dissipation: 166.5W Polarisation: unipolar Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 766 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB280L | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 140A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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AOB280L | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 140A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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AOB280L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 20.5A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V |
Produkt ist nicht verfügbar |