AOB286L Alpha & Omega Semiconductor

Description: MOSFET N-CH 80V 13A/70A TO263, Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 167W (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).