AOB286L Alpha & Omega Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.43 EUR |
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Technische Details AOB286L Alpha & Omega Semiconductor
Description: MOSFET N-CH 80V 13A/70A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V.
Weitere Produktangebote AOB286L nach Preis ab 1.50 EUR bis 1.50 EUR
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AOB286L | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB286L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB286L | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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AOB286L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 83W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 55A Power dissipation: 83W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 63nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOB286L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 80V 13A/70A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V |
Produkt ist nicht verfügbar |
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AOB286L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 83W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 55A Power dissipation: 83W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 63nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |