AOB414 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 6.6A/51A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.92 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
8 Stücke
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Technische Details AOB414 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 6.6A/51A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V.
Weitere Produktangebote AOB414
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOB414 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 75W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 75W Case: TO263 Gate-source voltage: ±25V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhancement |
auf Bestellung 573 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOB414 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 75W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 75W
Case: TO263
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 75W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 75W
Case: TO263
Gate-source voltage: ±25V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
auf Bestellung 573 Stücke:
Lieferzeit 14-21 Tag (e)