AOB42S60L ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 0.31Ω
Drain current: 23A
Drain-source voltage: 600V
Gate-source voltage: ±30V
Power dissipation: 417W
Kind of channel: enhancement
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Technische Details AOB42S60L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 37A TO263, Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 417W (Tc), Rds On (Max) @ Id, Vgs: 109mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOB42S60L
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AOB42S60L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 37A TO263 Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 109mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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