AOB66613L Alpha & Omega Semiconductor Inc.


AOB66613L.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 44.5A/120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.52 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AOB66613L Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 60V 44.5A/120A TO263, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 8.3W (Ta), 260W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote AOB66613L nach Preis ab 3.43 EUR bis 7.39 EUR

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AOB66613L AOB66613L Alpha & Omega Semiconductor Inc. AOB66613L.pdf Description: MOSFET N-CH 60V 44.5A/120A TO263
Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.39 EUR
10+4.87 EUR
100+3.43 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOB66613L AOB66613L.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 44.5A/120A TO263
Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.39 EUR
10+4.87 EUR
100+3.43 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH