AOB66916L Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 35.5/120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 3.56 EUR |
| 1600+ | 3.05 EUR |
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Technische Details AOB66916L Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 35.5/120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Power Dissipation (Max): 8.3W (Ta), 277W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V.
Weitere Produktangebote AOB66916L nach Preis ab 4 EUR bis 5.9 EUR
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AOB66916L | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 35.5/120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 277W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V |
auf Bestellung 2640 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOB66916L | Hersteller : Alpha & Omega Semiconductor |
N-Channel MOSFET |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOB66916L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOB66916L | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |