AOC3878 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Version: ESD
Gate charge: 60nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Anzahl je Verpackung: 5000 Stücke
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Technische Details AOC3878 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 12V 35A 10DFN, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 10-AlphaDFN (3.55x1.77).
Weitere Produktangebote AOC3878
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| AOC3878 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 12V 35A 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 10-AlphaDFN (3.55x1.77) |
Produkt ist nicht verfügbar |
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| AOC3878 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain Mounting: SMD Case: DFN10 Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Version: ESD Gate charge: 60nC Kind of channel: enhancement Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |