AOD2910 ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 100V; 20V; 42mOhm; 31A; 53,5W; -55°C ~ 175°C; AOD2910 TAOD2910
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.04 EUR |
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Technische Details AOD2910 ALPHA&OMEGA
Description: MOSFET N CH 100V 6.5A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 53.5W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOD2910 nach Preis ab 0.38 EUR bis 1.06 EUR
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AOD2910 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21.5A; 53.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21.5A Power dissipation: 53.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 7nC Kind of channel: enhancement |
auf Bestellung 1994 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOD2910 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.5A; 53.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.5A
Power dissipation: 53.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.5A; 53.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.5A
Power dissipation: 53.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 7nC
Kind of channel: enhancement
auf Bestellung 1994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 154+ | 0.56 EUR |
| 190+ | 0.45 EUR |
| 211+ | 0.4 EUR |
| 500+ | 0.38 EUR |