AOD2922 Transistor

Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 3.5A/7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V

Hersteller: UMW
Description: MOSFET N-CH 100V 3.5A/7A TO252

Hersteller: ALPHA&OMEGA
AOD2922 Transistor N-Channel MOSFET; 100V; 20V; 270mOhm; 7A; 17W; -55°C ~ 175°C; TAOD2922

Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 3.5A/7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V

Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of channel: enhancement