Weitere Produktangebote AOD2N60 nach Preis ab 0.25 EUR bis 1.81 EUR
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AOD2N60 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD2N60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD2N60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 2A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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AOD2N60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 56.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 56.8W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement |
auf Bestellung 2501 Stücke: Lieferzeit 14-21 Tag (e) |
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AOD2N60 | Hersteller : ALPHA&OMEGA |
Transistor N-Channel MOSFET; 600V; 30V; 4,4Ohm; 2A; 56,8W; -50°C ~ 150°C; AOD2N60 TAOD2n60 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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AOD2N60 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 2A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
auf Bestellung 34999 Stücke: Lieferzeit 10-14 Tag (e) |
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AOD2N60 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| AOD2N60 | Hersteller : AOS |
MOSFET N-CH 600V 2A DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |